GaN surface acoustic wave filter with low insertion loss

Abstract

Surface acoustic wave (SAW) filter with a low insertion loss (IL) of 4.415 dB has been demonstrated on Carbon-doped semi-insulating c-plane bulk GaN without external lumped element matching. The center frequency, 3 dB bandwidth, out-of-band attenuation, return loss of the filter are 477.05 MHz, 0.308 MHz, 32.5 dB, and −9.72 dB, respectively. The electromechanical coupling coefficient (Kt2), and temperature coefficient of frequency (TCF) of the filter are 0.21 % and −26.0 ppm/°C, respectively. The impact of the number of interdigital transducers (NIDT) and acoustic propagation direction on filter performance has been studied. The IL of filters reduces from 16.07 dB to 4.415 dB with the increase of NIDT from 50 to 150 due to the enhanced acoustic superposition. The numerical distribution of elastic stiffness ([cij]), and piezoelectric constants ([eik]) of GaN has been calculated in Euler angle space, indicating that they are isotropic on c-plane. The small performance difference of filters along the m- and a-direction on c-plane bulk GaN can be attributed to the small offset angle of 0.5° of the bulk GaN wafer or IDT quality variation.