Abstract
Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.
Highlights
It seems that the lack of native wafers, of high structural quality, appropriate size, and electric properties, limits the development of GaN-based electronic devices
Semi-insulating GaN (SI-GaN) wafers are needed for preparing lateral devices, i.e., high electron mobility transistors (HEMTs)
At the end of this paper, new results of halide vapor phase epitaxy (HVPE)-GaN grown on native ammonothermal GaN (Am-GaN) seeds are discussed
Summary
It seems that the lack of native wafers, of high structural quality, appropriate size, and electric properties, limits the development of GaN-based electronic devices. The sodium flux method is mostly developed at Osaka University [19] and their GaN crystals or substrates are not available on the market. It should be, remarked that a 6-inch sodium flux crystal has already been demonstrated [20]. The results of GaN bulk growth performed in Poland, at IHPP PAS, are briefly presented. This, together with an anisotropy of growth, is the reason why obtaining truly bulk GaN is so difficult, even if native seeds of high structural quality are used. At the end of this paper, new results of HVPE-GaN grown on native Am-GaN seeds are discussed
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
