Abstract
UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.
Published Version
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