Abstract
AbstractExciton absorption peak has been clearly observed at room temperature by photovoltaic spectra, on a GaN layer grown on (0001)-plane Sapphire by metalorganic chemical vapor deposition. From the spectra, we obtained A and B exciton transition energies to be 3.401 eV, 3.408 eV, and the energy gap to be 3.426 eV in wurztite GaN, respectively. We have also performed photovoltaic measurements with various incidence angles of light, and observed the polarization behavior of exciton absorption in GaN. Finally, we used UV-polarizer to further confirm the polarization properties of GaN. In conjuction with previous room temperature photoreflectance measurements, this work provide direct and reliable assessment of the excitonic properties and crystal quality of GaN semiconductor layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
