Abstract
Wafer bonding technology is applied to the GaN/quantum dots/GaN p-i-n system. Processing conditions for successful wafer bonding are described. Temperature dependence of bond strength properties are characterized. Strongest bonding is achieved when annealing temperature is 350 oC as a result of cross-linking due to the bidentate nature of the thiophene thiol ligand. Electrical properties of bonded heterostructures are studied, in which a diode like I-V curve and multiple conduction channels are observed. Optical properties of the QDs active layer after bonding are also investigated.
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