Abstract
GaN nanowires are grown as templates for pendeoepitaxial coalescence overgrowth at substrate temperatures between 720 and 820°C on Si(111) by molecular beam epitaxy. The unintentional coalescence of nanowires is suppressed with increasing substrate temperature. Simultaneously, the width of the donor-bound-exciton transition at 3.472eV decreases down to 1.6meV. The length distribution of the GaN nanowires strongly influences the morphology of the pendeoepitaxial layer after coalescence.
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