Abstract
On the road of CMOS device continuously scaling, there are lots of challenges regarding the device structure and material engineering. GaN channel has recently been used in MOSFETs and achieved excellent performance. In this paper, we study a novel embedded gate GaN nanotube field effect transistor of 5 nm gate length with I ON /I OFF as high as 10 6 , and subthreshold swing (SS) as small as 64 mV/dec using Sentaurus TCAD simulation. The device can effectively improve subthreshold characteristics due to the GaN channel and embedded gate design. Compared with Si nanotube FET and GaN nanowire FET, GaN embedded nanotube FET exhibits low SS and high I ON /I OFF at the same channel thickness. GaN embedded nanotube FET has also been determined to superior temperature adaptability and performs better in terms of threshold voltage and subthreshold characteristics compared to Si nanotube FET at the same temperature. In addition, we investigated the impact of different lengths and thicknesses of the embedded gate on the subthreshold characteristics. As the length and thickness of the embedded gate are increased, SS and I ON /I OFF are improved. This excellent electrical performance demonstrates the possibility of GaN as a channel material in MOSFETs and embedded gate as an effective design to improve subthreshold characteristics, opening a new way for continued device scaling.
Highlights
As the size of MOSFETs is approaching the limit of scaling, other possibilities for improving device performance have been widely explored in recent years
We present the performance of GaN embedded nanotube FET with different channel thicknesses and temperatures compared to other structures and the impact of the embedded gate length and thickness on GaN embedded nanotube FET, and demonstrate that the device has excellent device performance and superior scaling capacity
By comparing GaN embedded nanotube FET and GaN nanowire FET with the same channel thickness, we find that the embedded gate demonstrates significant enhancement in gate control, thereby improving the electrical performance of the device compared with traditional gate structure
Summary
As the size of MOSFETs is approaching the limit of scaling, other possibilities for improving device performance have been widely explored in recent years. As the channel length is scaled to 5nm and below, the control of the gate to the channel decreases, and the subthreshold characteristics of the GAA structure are affected. GaN as a channel material has a wide electronic band gap, which can significantly reduce inter-band tunneling and gate induced drain leakage, providing excellent subthreshold characteristics for GaN embedded nanotube FET [7], [8]. We present the performance of GaN embedded nanotube FET with different channel thicknesses and temperatures compared to other structures and the impact of the embedded gate length and thickness on GaN embedded nanotube FET, and demonstrate that the device has excellent device performance and superior scaling capacity
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