Abstract
In this work, we implement a technique of selective area sublimation to shape GaN or GaN/(Ga,In)N layers. The sublimation has a perfect selectivity with the mask material (either SixNy or SiOx) and vertical sidewalls over a depth up to 7 µm are obtained. The mask thickness can be as thin as 1 mono-layer. We apply this technique for the top-down fabrication of several structures: nanoporous GaN and GaN/(Ga,In)N quantum wells, deep nanoholes in GaN and arrays of GaN nanolasers.
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