GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with Ir ∕ Pt Contact Electrodes

Abstract

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with and Schottky electrodes were fabricated. It was found that room-temperature effective Schottky barrier height was for on . It was also found that we could achieve a 60 times smaller dark current and a 20 times larger photocurrent to dark current contrast ratio by using contact electrodes. With a applied bias and an incident light wavelength of , it was found that measured responsivity was for the detector with contact electrodes.