Abstract
Ga N high electron mobility transistor( HEMT) has been widely acknowledged for use in high-frequency,high-power,and high-temperature applications because of their features such as its wide band gap,high electron saturation velocity,high 2-DEG density at the hetero-interface,high breakdown voltage( BV),and high thermal conductivity. The issues that limit the gallium nitride high electron mobility transistor device performance improvement and some solutions are introduced firstly. And then,the latest research progress on the high-frequency,high-power area of gallium nitride high electron mobility transistor is reviewed in detail with focus on the material structural design and the device structural design. Finally,the direction for the development of the device is discussed briefly.
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