Abstract
In this paper we implemented GaN high electron mobility transistor (HEMT) based self oscillating active integrated antenna (AIA) operating in L-Band. A negative resistance oscillator is designed. Patch antenna is designed in such a way to absorb the load network of oscillator. Oscillator and Patch antenna is integrated. AIA is fabricated on single substrate and measured. Measured performance shows fundamental frequency of oscillation 1.512 GHz and effective isotropic radiated power (EIRP) of 18.2 dBm. To the authors best knowledge this is the first demonstration of GaN HEMT based self oscillating active integrated antenna.
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