Abstract
AbstractThe microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon (111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH4 exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH4 exposure time between 75‐90 sec. At this optimal condition a step‐flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiNx masking. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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