Abstract
Classic Dual Active Bridge (DAB) converters built with Si MOSFETs are commonly switched around 20 kHz due to hard switching at low power and high gain. Great efforts have been made to develop modulation methods to extend soft switching condition, reduce current stress, and increase switching frequency. To further improve switching frequency and power density, it is critical to use switches featured with ultra-low switching loss. Wide band gap (WBG) devices are ideal options. Among 650V WBG devices, Cascode GaN FETs have been a forerunner and their maturity has been demonstrated in many ways. With automotive grade GaN FETs, a 100 kHz 5 kW DAB is designed for bi-directional battery charger application in this paper.
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