GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation

Abstract

GaN epitaxial layers were grown on sapphire substrate deposited an aluminum (Al) buffer layer using a hydride vapor phase epitaxy (HVPE) system with a two-zone resistance furnace. A 10nm-thick Al buffer layer was prepared by an e-beam evaporation in order to reduce the stress resulted from thermal mismatch between the GaN layer and the substrate. The growth temperature and growth rate for GaN epitaxial layer were 1050oC and 40 m/hr, respectively. GaN epitaxial layer grown on substrate with Al buffer layer exhibited uniform and smooth morphology on 2-inch whole substrate and a bow value of 33.5 m. The addition of Al-buffer layer apparently reduced the full width at half maximum (FWHM) value of GaN layer, which indicated the improvement of crystal quality.