Abstract
The commercialization of blue, green, and white GaN-based light-emitting diodes and violet laser diodes has created tremendous interest both from an applications viewpoint and for the basic science of the AlGaInN materials system. The fact that extremely efficient light emission can be achieved in heteroepitaxial layers of these materials grown on lattice mismatched substrates such as sapphire is counter to the experience of almost 40 years of semiconductor light source technology.
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