GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH 3

Abstract

A new method of GaN growth from Ga solution with NH 3 has been developed. The method is characterized by the use of a thin layer of Ga wetting solution formed on a rotating substrate and chemical reaction with NH 3 at the solution surface. The growth experiments, performed at 980°C with NH 3 supply rate of 9 sccm for 30 h, resulted in the layer mode growth of about 4 μm thickness on a part of Si-face of a 6H–SiC substrate. The thickness of wetting solution required for creating suitable super-saturation is discussed.