Abstract
GaN is now providing solid-state power amplifiers of higher efficiency, bandwidth, and power density than could be achieved only a few years ago. Novel circuit topologies combined with GaN's high-voltage capabilities and linearization are allowing GaN high-power amplifiers to simultaneously achieve both linearity and record high efficiency. GaN high-power amplifiers have been produced with more than 100 W of power over multioctave bandwidths and with PAEs of more than 60%. Narrower-band high-power amplifiers have been produced with PAEs of more than 90%.
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