Abstract
The modeling of aluminum gallium nitride (AlGaN) p-i-n photodetectors response in the very narrow ultraviolet A (UV-A) range is reported in this paper. To obtain narrow-band response and high short wave rejection ratio, two AlGaN buffer layer with Al-content higher than that of the absorption region were designed between the substrate and un-doped AlGaN absorption layer to act under backside illumination as filter for short wavelength radiation. The band-pass of these a structure depends on the buffer layer Al-content. Electronic-band-structure calculations show that the blocking layer is the crucial parameter to achieve both a high short wave rejection ratio and a low dark current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
