Abstract
In this paper, we introduce how gallium nitride-based (GaN-based) VCSELs with curved mirrors have evolved. The discussion starts with reviewing the fundamentals of VCSELs and GaN-based materials and then introducing the curved-mirror cavity’s principle and history and the latest research where the structure is applied to GaN-based materials to form VCSELs. We prepared these parts so that readers understand how VCSELs with this cavity work and provide excellent characteristics such as efficiency, life, stabilized mode behavior, etc. Finally, we discussed the challenges and prospects of these devices by touching on their potential applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.