Abstract
We report on the fabrication of a solar-UV monitoring system that uses GaN-based photodetectors. GaN photoconductors, p-n junction photodiodes, and Schottky barrier photodiodes have been fabricated and characterized as UV sensors. The best performances are obtained in Schottky photodiodes, which show a linear response, a flat responsivity of 100 mA/W, a visible rejection ratio higher than 10(3), and a noise-equivalent power of 1 nW/Hz(-1/2). Preliminary data on Al(x)Ga(1-x)N (x = 0.15, 0.22) detectors are also presented. Using GaN Schottky diodes, we fabricate and evaluate a complete solar-UV detection head.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
