GaN-based parallel micro-light-emitting diode arrays with dual-wavelength InxGa1-xN/GaN MQWs for visible light communication.

Abstract

The dual-wavelength InxGa1-xN/GaN micro light emitting diode (Micro-LED) arrays are fabricated by flip-chip parallel connection. It is noted that the Micro-LED arrays with smaller diameter present considerably bigger light output power density (LOPD). For all Micro-LEDs, the LOPD increases continuously with increasing injection current density until it "turns over". It also can be observed that the maximum value of LOPD is determined by the blue quantum well (QW) for the broad area LED. In comparison, the green peak intensity dominates the change of LOPD in the Micro-LEDs. In addition, the enhancement of the green peak intensity value for the Micro-LEDs are considered as a consequence of the combined effects of the reduction in the quantum-confined Stark effect (QCSE) and the crowding effect, high LEE as well as geometric shape. Moreover, -3dB modulation bandwidths of the four different kinds of Micro-LEDs increase with the decrease of the device diameter in the same injected current density, higher than that of the broad area LED. The -3dB modulation bandwidth of the 60 µm Micro-LED shows 1.4 times enhancement compared to that of the broad area LED under the current density of 300 mA/cm2. Evidently, the dual-wavelength InxGa1-xN/GaN Micro-LEDs have great potential in both solid-state lighting (SSL) and the visible light communication (VLC) in the future fabrication.