Abstract
GaN-based indium-tin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n + -short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very rough. It was also found that 20 mA forward voltages measured from ITO LEDs with p-GaN, n + -SPS and nanostructured silicon contact layers were 6.01, 3.25 and 3.26 V, respectively. Compared with ITO LED with n + -SPS, it was found that output power of ITO LED with nanostructured silicon contact was 17% larger. Furthermore, it was found that ITO LED with nanostructured silicon contact was more reliable.
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