Abstract
AbstractWe report on the growth, structural and optical properties of GaN/AlN free standing NWs. The NW lateral growth rate was investigated using thin AlN marker layers. The lateral growth is found to be homogeneous along the NW axis. Its rate can be tuned from ∼1% to ∼10% of the axial growth rate by changing III/V flux ratio. The resulting axial and lateral heterostructures were studied by micro‐photoluminescence and micro‐cathodoluminescence, which revealed sharp (several meV broad) emission lines. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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