GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate

Abstract

In this work, we report on a GaN/AlGaN superlattice based normally-off hole channel FinFET devices. A combination of Schottky gate and 60 nm wide fins led to enhancement mode operation. The device had an on-current of 13 mA/mm and an on-resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$300~\Omega $ </tex-math></inline-formula> .mm. simultaneously, a large Ion/Ioff > 107 and a current modulation of more than two orders of magnitude in the enhancement mode regime was also achieved.