Abstract
The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-μm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3 V. High ultraviolet-to-visible rejection ratios of 1.9 × 104 and 1.2 × 102 were obtained at the bias voltages of 2 and 4 V, respectively. Optical gain as high as 1.6 × 103 was achieved.
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