Abstract
Gadolinium is a competent neutron conversion material for neutron detection due to its extremely high neutron capture cross section. It differs from the other neutron reactive materials by emitting large amounts of low-energy electrons for the consequent signal generation in a detector. Such low-energy electrons, though abundant, are prone to be contaminated by internal and/or external gamma rays, such as the activated 43.0 keV K-X rays, given the high atomic number of gadolinium. While the 43.0 keV K-X ray ought to be rejected as it originates in part from the external gamma rays when neutron detection is concerned, the ability to separate this energy line from other signals points to a practical mode of gamma-ray detection by a thin-film semiconductor with gadolinium as a converter. In this paper, a gamma-ray discrimination scheme for neutron detection is studied, which also provides insight into gamma-ray detection with a small semiconductor device with gadolinium as a converter, in line with the same principle of isolating the K-X rays activated by high- or medium-energy gamma rays.
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