Abstract
The purpose of this study is to determine the effects of gamma (γ)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by the wet transfer method. After Al/Graphene/Al2O3/p-Si structure has been exposed to 30 kGy and 60 kGy γ-ray irradiation, capacitance, and conductance measurements have been accomplished at 300 K. Electrical parameters have been compared before and after γ-ray irradiation for 50 kHz and 500 kHz. These results have been confirmed that capacitance and conductance values have increased after γ-ray irradiation and, have decreased when the radiation dose was increased from 30 kGy to 60 kGy. It has been observed that series resistance has decreased after 30 kGy radiation dose and has increased with increasing radiation dose.
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