Abstract
This paper presents for the first time the effects of ionizing gamma rays on a high-performance UHV/CVD SiGe BiCMOS technology irradiated at both 300K and 77K. The SiGe HBTs show a degradation in current gain below 10% at 300K and no observable shifts in current gain at 77K. The Si pFETs are radiation hard to 1.0 Mrad(Si) at both 300K and 77K, while the Si nFETs are able to withstand 100 krad(Si). In this work, we examine the total dose response of SiGe HBTs and concentrate on the post-radiation behavior of the nFETs and pFETs irradiated under bias at both 300K and 77K.
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