Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Khalil Arshak,Olga Korostynska

doi:10.3390/s20800347

Abstract

Thin films of Tellurium dioxide (TeO2) were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

Highlights

The ability to detect and perform energy-dispersive spectroscopy of high-energy radiation such as X-rays, γ-rays, and other uncharged and charged particles has improved dramatically in recent years [20]
Tellurium dioxide belongs to the category of compounds in which all the atoms are the so-called pelements, having non-bonding valence electron pairs [4]
An Edwards E306A vacuum thermal coating system was used for thin films deposition

Summary

Introduction

The ability to detect and perform energy-dispersive spectroscopy of high-energy radiation such as X-rays, γ-rays, and other uncharged and charged particles has improved dramatically in recent years [20]. This is of great importance in a wide range of applications including medical imaging, industrial process monitoring, national security and treaty verification, environmental safety and remediation, and basic science. The influence of γ-radiation onto different types of thin films has been discussed earlier [18, 21] The aim of this experimental work is to investigate the changes in both the electrical and optical properties of TeO2 thin film structures under the influence of γ-radiation. The influence of radiation depends on both the dose and the parameters of the films including their thickness: the degradation is more severe for the higher dose and the thinner films [3]

Methods

Results

Conclusion