Abstract
Boron-doped silicon, compensated by the lithium ion drift method, was irradiated at room temperature with 60Co gamma rays. Resistivity and Hall-effect measurements show the samples to be p type immediately after irradiation. Kept near room temperature the p-type conductivity of the samples spontaneously increases because lithium donors are lost by precipitation on irradiation-produced defects. Also other defects are introduced which have an electron energy level at Ev+(0.25±0.03) eV in float zone and at Ev+(0.30±0.03) eV in oxygen-rich silicon. The latter level is ascribed to the association of oxygen with an interstitial silicon atom.
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