Abstract
The radiation hardness of Ni/Ga2O3/Ni metal-semiconductor-metal (MSM) solar blind photodetectors has been investigated under the exposure of 60Co γ-source. It was observed that the metal contacts were not degraded and the dark current of photodetector was slightly improved from 3.27 × 10−7 A to 1.88 × 10−7 A. The photo to dark current ratio (PDCR) was observed to increase from 5.1 to 14.1 with increasing γ-radiation exposure. The apparent Schottky barrier height (SBH) evaluated from current-voltage characteristics were found to increase with irradiation. The increased SBH was explained using image force induced barrier lowering. The obtained results reveal that the Ga2O3 solar blind photodetectors are relatively less susceptible to radiation environment.
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