Abstract
The influence of gallium (Ga) doping on the structure of cubic MgZnO was studied by changing the doping level. Cubic Mg0.56Zn0.44O films with various Ga-doping levels were grown by metal-organic chemical vapor deposition method. The mole fraction of Ga in this experiment was 0, 2.8%, 3.1%, 3.3%, and 4.5% in MgZnO. Ga2O3, ZnO and ZnGa2O4 phase separations took place subsequently with Ga mole fraction increasing to 3.1%, 3.3%, and 4.5%. The Ga2O3 and ZnGa2O4 phase separations can be attributed to their solubilities in MgZnO, and the formation of ZnO comes from the introduction of Ga which breaks the metastable structure of cubic MgZnO.
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