Galvanomagnetic properties of p diffusion, accumulation and inversion layers at the SiSiO 2 interface in the low temperature range

Abstract

The galvanomagnetic properties of carriers in p-type diffusion, accumulation and inversion layers at the SiSiO 2 interface were studied in the range 4.2–295 K. Special gate-controlled silicon structures with a diffused channel of high resistivity were used. The temperature and field effect dependence of the surface conductance, Hall mobility, Hall coefficient and magnetoresistance are discussed on the basis of two mechanisms: impurity ionization and the field effect.