Abstract

The field and temperature dependences of the electrical resistivity, Hall effect and transverse magnetoresistance of Ni 2MnIn and Ni 2MnSb are described over the approximate ranges 4–300 K and 0–4.8×10 6 Am -1, together with measurements of the magnetization in the range 0–1.6×10 6 Am –1. Together with existing data for Ni 2MnSn, these results show the systematic effects of the shifting Fermi level in the In→Sn→Sb series. We give a qualitative interpretation of these electron transport effects in terms of a delocalized picture.

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