Abstract
The kinetic effects:-Hall effect, magnetoresistance, and Nernst-Ettinghausen effect-are examined in n-type gallium arsenide having a free electron concentration at room temperature of less than 1015 cm−3. The work was directed toward determining the dominating scattering mechanism in compensated material. At low temperatures the scattering is predominately by impurity atoms and optical vibrations (optical phonons); at high temperatures, by acoustic phonons. With simultaneous scattering by thermal vibrations and impurity ions, for temperatures T > 300 ° K, the second mechanism plays the basic role in the longitudinal Nernst-Ettinghausen effect.
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