Abstract
GaInAsP-InP double-heterostructure lasers which are the most promising optical sources for the long wavelength region have been investigated. In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys. The unit cell of the GaInAsP epitaxial layer is tetragonally deformed due to the interface lattice misfit such that the lattice constant parallel to the wafer surface is invariant across the interfaces in the GaInAsP-InP wafers. Two kinds of stripe lasers, planar stripe and buried lasers, have been fabricated by use of GaInAsP cap layer for good p-type contact. The planar stripe lasers of 10,15 and 20 μm wide stripe operated in fundamental-transverse mode with 20–30% differential external efficiencies per facet. The 15 μm wide stripe laser showed good mode characteristics to operate in a fundamental-transverse mode up to the cw output power of 22 mW per facet and in a single longitudinal mode over a wide range of currents. The buried stripe laser operated in a fundamental-transverse mode with the threshold current as low as 30 mA by making the stripe width narrower than 2 (μm. The laser succeeded in cw operation at 100 °C because of its low threshold current and low thermal resistance.
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