Abstract
Gallium arsenide has been used to fabricate variable reactance and computer diodes which compare favorably with the best commercially available of germanium and silicon. The diodes have been fabricated by zinc diffusion into n‐type gallium arsenide. Ohmic contact to the n‐type material has been made with an antimony‐gold alloy and to the p‐type side with indium. Etching is used to remove the p‐type diffused skin from everywhere but under the indium contact, thereby forming the mesa and defining the p‐n junction area. Rectification ratios (at 2 v) as high as 1010 have been achieved. The diodes have been operated successfully in a variable reactance amplifier at S‐band (2800 mcps) and in millimicrosecond‐switching computer circuits.
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