Abstract
A novel sulfur passivation of GaAs surface has been developed by using the microwave sulfur glow discharge technique. Auger electron spectroscopy and Rutherford backscattering measurements show that the passivation film is mainly composed of sulfur and gallium, with the atomic ratio of gallium to sulfur close to 1 : 1. From X-ray diffraction measurement, the crystalline structure of GaS is identified to be polycrystalline hexagonal phase. The refractive index and dielectric constant of GaS have been measured. The breakdown strength of the GaS film is above 106 V/cm, which proves that GaS might also be used as an insulating film in the metal-insulator-semiconductor structure.
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