Abstract
This paper shows Gallium Nitride material based photodiode as an overview to use it with different layer thickness in order to detect multi-spectral ranges and to obtain high performance, high responsivity, high speed and low cost optoelectronic devices. The earlier published works are summarized as well as the Gallium Nitride material grown on different substrates materials as silicon, or sapphire or quartz using different growth methods to fabricate photodiodes used in wide application field and get attractive attention to civil and military industries to detect missile plumes, flame sensors, engine control, solar UV monitoring, source calibration, UV astronomy, and secure space-to-space communications. GaN material based photodiodes are consider to be promising to open a new generation fields to their virtues to design high temperature, high frequency and high power optoelectronic devices.
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