Abstract
The microstructure of undoped cubic and hexagonal GaN films is studied using temperature dependent Ga K-edge EXAFS measurements (10K-290K). The microstructure around the Ga atom is distorted due to a splitting of the second nearest neighbor shell, which consists of Ga atoms. This splitting results in an additional Ga path at a distance longer than expected by 0.8±0.05 A and is attributed to local lattice relaxation around nitrogen vacancies. From the temperature dependence of the DW factors for the 2 nd nearest neighbor shell of Ga, the Einstein temperature is equal to 318±25K.
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