Abstract
Gallium indium phosphide (Ga0.51In0.49P), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwaveguide (0.2×11×1300 μm) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed (-34 dB), leaving the nonlinear properties unchanged, making it suitable for low-noise applications.
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