Abstract
We report microstructural characteristics and properties of gallium-doped ZnO films deposited on glass by pulsed laser deposition. The Zn0.95Ga0.05O film deposited at 200 °C and 1×10−3 Torr showed predominant ⟨0001⟩ orientation with a metallic behavior and a resistivity of 2×10−4 Ω cm at room temperature. Low resistivity of the ZnGaO films has been explained in terms of optimal combination of carrier concentration and minimized scattering, and is correlated with the microstructure and the deposition parameters. Power conversion efficiency comparable to indium tin oxide-based devices (1.25±0.05%) is achieved on a Zn0.95Ga0.05O∕Cu-phthalocyanine∕C60 double-heterojunction solar cell.
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