Abstract
The distribution of Ga and Al atoms within the octahedral sheets of synthetic goethites has been investigated by XRD and Ga K-edge XANES and EXAFS spectroscopies. XRD results indicate a solid solution between goethite (αFeOOH) and GaGoe4 (40 mol% of Ga). The XANES data indicate the presence of 6 Ga in the solid solution. The fitting procedures for EXAFS spectra show no evidence of preferential octahedral site substitutions for Ga.
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