Abstract
Silicon nanowires have been grown with gallium as catalyst by plasma enhancedchemical vapor deposition. The morphology and crystalline structure has beenstudied by electron microscopy and Raman spectroscopy as a function of growthtemperature and catalyst thickness. We observe that the crystalline quality of thewires increases with the temperature at which they have been synthesized. Thecrystalline growth direction has been found to vary between and , depending on both the growth temperature and catalyst thickness. Gallium has beenfound at the end of the nanowires, as expected from the vapor–liquid–solid growthmechanism. These results represent good progress towards finding alternative catalysts togold for the synthesis of nanowires.
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