Abstract
Gallium arsenide films have been deposited on graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow. The structural and electrical properties of gallium arsenide films have been investigated. The interface between undoped gallium arsenide and graphite exhibits rectifying characteristics; however, a heavily doped interlayer reduces the interface resistance to a tolerable level. MOS-type solar cells prepared from n-GaAs/n+-GaAs/graphite structures have AM1 efficiencies of higher than 6%.
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