Abstract
Undoped GaSb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped GaSb samples, which were identified to be predominantly Ga vacancy ( V Ga ) related defects by combining the CDB measurements. After annealing of these samples at 520 °C, positron shallow trapping have been observed and should be due to Ga Sb defects. Undoped GaSb is intrinsically p-type having a residual carrier density of 10 16– 10 17 cm − 3 . And the Ga Sb antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga Sb antisite defects are the acceptor contributing to the p-type conduction for undoped samples.
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