Abstract
Epitaxial layers of undoped p-GaSb were grown from Ga-rich and Sb-rich solutions on (111) and (100) oriented GaSb substrates. The growth temperatures ranged from 330–470°C (Ga solution) and 635–680°C (Sb solution). Different growth results were obtained for the two LPE processes. The layers were characterized by photoluminescence measurements at low temperatures (1.8 K). The highest purity was obtained by low temperature LPE from Ga solutions.
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