Abstract
The use of GaInP/GaAs heterojunction bipolar transistors (HBTs) for integrated circuit applications is demonstrated. The discrete devices fabricated showed excellent DC characteristics with low V/sub ce/ offset voltage and very low temperature sensitivity of the current gain. For a non-self-aligned device with a 3- mu m*1.4- mu m emitter area, f/sub T/ was extrapolated to 45 GHz and f/sub max/ was extrapolated to 70 GHz. The measured 1/f noise level was 20 dB better than that of AlGaAs HBTs and comparable to that of low-noise silicon bipolar junction transistors, and the noise bump (Lorentzian component) was not observed. The fabricated gain block circuits showed 8.5 dB gain with a 3-dB bandwidth of 12 GHz, and static frequency dividers (divide by 4) were operable up to 8 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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