Abstract

Physical analysis of the long-wavelength room-temperature (RT) continuous-wave (cw) emission within the 1.50−1.55 μm range from the GaAs-based GaInNAsSb/GaNAs quantum-well (QW) vertical-cavity surface-emitting diode lasers (VCSELs) is carried out. To this end, a comprehensive three-dimensional optical-electrical-thermal-gain self-consistent simulation of physical processes taking place inside a laser volume is applied. While the 1.50-μm emission has been found to be reached practically without trouble, the 1.55-μm emission needs additional optimizations. For the optimal QW structure, the 1.55-μm emission in highly detuned VCSELs requires RT cw threshold currents more than 18 times higher than those of the 1.50-μm one. Some threshold reduction may be achieved by adding the second quantum well. The 3λ-cavity design has been proved to be optimized for the 1.50-μm emission ensuring stable fundamental-mode operation even at elevated temperatures whereas the 1.5λ-cavity is optimal for the 1.55-μm emission for which threshold reduction is more important. For the 1.50-μm emission, some structure optimizations have been proposed. The GaInNAsSb/GaNAs structure offers promising prospects to manufacture VCSELs emitting 1.55-μm radiation, but some technology and construction improvements are still necessary.

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