GaInNAs-based long-wavelength lasers grown by MOCVD

Abstract

ABSTRACT GaInNAs is a novel III-V semiconductor material and is a very attractive material for long-wavelength-range lasers. Highlystrained 1.3 m range GaInNAs/GaAs double quantum-well lasers grown by metalorganic chemical vapor deposition aredemonstrated. A high characteristic temperature of 205 K (22 - 80 C) was obtained with a low threshold current density of0.92 kA/cm 2 (22 C) in a broad stripe laser. The highest lasing operation temperature of 170 C, and continuous-waveoperation with a low threshold current of 27 mA were also obtained in a 7.5- m-wide ridge-stripe laser. TheGaInNAs/GaAs material system is very promising for next-generation long-wavelength lasers without any cooling devicebecause they have stable characteristics at ambient temperature.Keywords: GaInNAs, GaAs substrate, quantum well, semiconductor laser, long wavelength, metalorganic chemical vapordeposition, strain, characteristic temperature 1. INTRODUCTION Lasers emitting at 1.3 m have been widely used for optical access systems and optical interconnection systems. Forsuch applications, the lasers should meet the requirements of low threshold current and operation without the need for anycooling method in order to achieve low-cost systems. These lasers consist mostly of GaInPAs alloys grown on InPsubstrates. However, InP-based lasers have a poor characteristic temperature (T